THERMAL-STABILITY OF PD-IN OHMIC CONTACTS TO N-GAAS FORMED BY SCANNED ELECTRON-BEAM AND RAPID THERMAL ANNEALING

被引：4
|
作者：
PRASAD, K
FARAONE, L
NASSIBIAN, AG
机构：
[1] Microelectronics Research Group, Department of Electrical and Electronic Engineering, The University of Western Australia, Nedlands
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 02期
关键词：
STABILITY; ANNEALING;
D O I：
10.1049/el:19910097
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thermally stable and low resistance Pd-In ohmic contacts to n-GaAs were formed using scanned electron beam (SEB) and rapid thermal annealing (RTA). A specific contact resistance (p(c) of the order of approximately 10(-6) OMEGA-cm2 ws obtained using both SEB and RTA techniques with SEB annealed contacts exhibiting a superior surface morphology. High temperature aging (500-degrees-C) of the contacts showed that SEB annealed contacts were more stable than RTA contacts as shown by the increase in their respective p(c) values (an increase by a factor of approximately 5 for SEB annealed contacts against an increase by a factor of approximately 8 for RTA contacts after 25 hours of aging).
引用
收藏
页码：149 / 151
页数：3
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