FORMED-POINT-CONTACT VARACTOR DIODES UTILIZING A THIN EPITAXIAL GALLIUM ARSENDIE LAYER

被引：6
|
作者：
BURRUS, CA
机构：
来源：
PROCEEDINGS OF THE IEEE | 1963年 / 51卷 / 12期
关键词：
D O I：
10.1109/PROC.1963.2701
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1777 / &
相关论文
共 40 条
  • [1] FORMED-POINT-CONTACT GALLIUM ARSENIDE BACKWARD DIODES FOR MILLIMETER-WAVE APPLICATIONS
    BURRUS, CA
    YOUNG, DT
    [J]. SOLID-STATE ELECTRONICS, 1966, 9 (01) : 49 - &
  • [2] LIGHT-EMITTING FORMED-POINT-CONTACT GALLIUM ARSENIDE + GALLIUM ARSENIDE-PHOSPHIDE DIODES
    KIBLER, LU
    BURRUS, CA
    TRAMBARULO, RF
    [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 850 - &
  • [3] Epitaxial gallium nitride thin films grown on silicon substrates utilizing gallium nitride seed-layer formed by liquid source precursor
    Ky Nam Hoang
    Kim, Hong Tak
    Jun, Woosuk
    Park, Chinho
    [J]. KOREAN JOURNAL OF CHEMICAL ENGINEERING, 2012, 29 (01) : 130 - 133
  • [4] Epitaxial gallium nitride thin films grown on silicon substrates utilizing gallium nitride seed-layer formed by liquid source precursor
    Ky Nam Hoang
    Hong Tak Kim
    Woosuk Jun
    Chinho Park
    [J]. Korean Journal of Chemical Engineering, 2012, 29 : 130 - 133
  • [5] OBSERVATIONS ON EPITAXIAL GALLIUM ARSENIDE VARACTOR DIODES USING SCANNING ELECTRON MICROSCOPE
    GRATZE, SC
    THOMAS, RT
    [J]. MICROELECTRONICS RELIABILITY, 1970, 9 (01) : 71 - &
  • [6] RADIATIVE RECOMBINATION IN GALLIUM PHOSPHIDE POINT-CONTACT DIODES
    GORTON, HC
    SWARTZ, JM
    PEET, CS
    [J]. NATURE, 1960, 188 (4747) : 303 - 304
  • [7] RESPONSE SPEED OF GALLIUM ARSENIDE POINT-CONTACT DIODES
    VILISOV, AA
    VYATKIN, AP
    LATINIS, VS
    YEFIMCHI.MI
    [J]. RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1970, 15 (09): : 1749 - &
  • [8] A POINT CONTACT METHOD OF EVALUATING EPITAXIAL LAYER RESISTIVITY
    ALLEN, CC
    CLEVENGER, LH
    GUPTA, DC
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (05) : 508 - +
  • [9] InGaN light emitting diodes with a nanopipe layer formed from the GaN epitaxial layer
    Hsu, Wei-Ju
    Chen, Kuei-Ting
    Huang, Wan-Chun
    Wu, Chia-Jung
    Dai, Jing-Jie
    Chen, Sy-Hann
    Lin, Chia-Feng
    [J]. OPTICS EXPRESS, 2016, 24 (11): : 1601 - 1610
  • [10] Thin-film GaN Schottky diodes formed by epitaxial lift-off
    Wang, Jingshan
    Youtsey, Chris
    McCarthy, Robert
    Reddy, Rekha
    Allen, Noah
    Guido, Louis
    Xie, Jinqiao
    Beam, Edward
    Fay, Patrick
    [J]. APPLIED PHYSICS LETTERS, 2017, 110 (17)
1234