RESPONSE SPEED OF GALLIUM ARSENIDE POINT-CONTACT DIODES

被引：0

作者：

VILISOV, AA

VYATKIN, AP

LATINIS, VS

YEFIMCHI.MI

机构：

来源：

RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR | 1970年 / 15卷 / 09期

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D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：1749 / &

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[1] HIGH-FREQUENCY GALLIUM ARSENIDE POINT-CONTACT RECTIFIERS
SHARPLESS, WM
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (01): : 259 - 269
[2] RADIATIVE RECOMBINATION IN GALLIUM PHOSPHIDE POINT-CONTACT DIODES
GORTON, HC
SWARTZ, JM
PEET, CS
[J]. NATURE, 1960, 188 (4747) : 303 - 304
[3] POINT-CONTACT DIODES
RICCIUS, HD
SIEMSEN, KJ
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 35 (02): : 67 - 74
[4] AN EXTREMELY LOW-NOISE 6-KMC PARAMETRIC AMPLIFIER USING GALLIUM ARSENIDE POINT-CONTACT DIODES
UENOHARA, M
SHARPLESS, WM
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1959, 47 (12): : 2114 - 2115
[5] LIGHT-EMITTING FORMED-POINT-CONTACT GALLIUM ARSENIDE + GALLIUM ARSENIDE-PHOSPHIDE DIODES
KIBLER, LU
BURRUS, CA
TRAMBARULO, RF
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 850 - &
[6] ON SOME TRANSIENTS IN THE PULSE RESPONSE OF POINT-CONTACT GERMANIUM DIODES
WALTZ, MC
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1483 - 1487
[7] RESISTANCE MEASUREMENTS ON POINT-CONTACT DIODES
RICCIUS, HD
JONES, LH
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (09) : 825 - 827
[8] ON THE TAIL IN THE TRANSIENT BEHAVIOR OF POINT-CONTACT DIODES
ARMSTRONG, HL
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (05): : 696 - 697
[9] FORMED-POINT-CONTACT GALLIUM ARSENIDE BACKWARD DIODES FOR MILLIMETER-WAVE APPLICATIONS
BURRUS, CA
YOUNG, DT
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (01) : 49 - &
[10] MILLIMETER-WAVE POINT-CONTACT AND JUNCTION DIODES
BURRUS, CA
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (04): : 575 - +

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