HYDROSTATIC-PRESSURE EFFECT ON POINT-DEFECT ELECTRONIC STATES IN NARROW-GAP AND GAPLESS SEMICONDUCTORS

被引：10
|
作者：
STRIKHA, MV
VASKO, FT
机构：
[1] Institute of Semiconductor Physics, Ukrainian Academy of Sciences, Kiev
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1994年 / 181卷 / 01期
关键词：
D O I：
10.1002/pssb.2221810118
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A study is made of the influence of hydrostatic pressure on point defect states in narrow-gap and gapless semiconductors, described by the three-band Kane model. It is shown that shifts of energy levels of centres of different symmetry with pressure are different. The h-centre level follows strictly the v-band top. On the contrary, the 1-c level shift depends on pressure in a more complicated way, and is determined by system parameters. The transition from resonance to localized defect states due to the transition from gapless to narrow-gap semiconductors caused by hydrostatic pressure is also studied.
引用
收藏
页码：181 / 188
页数：8
相关论文
共 50 条
  • [31] Auger generation suppression in narrow-gap semiconductors using the magnetoconcentration effect
    1600, (71):
  • [32] INFLUENCE OF LOCALIZATION ON THE HALL-EFFECT IN NARROW-GAP, BULK SEMICONDUCTORS
    MANI, RG
    PHYSICAL REVIEW B, 1990, 41 (11): : 7922 - 7925
  • [33] Origin of anomalous temperature dependence of the Nernst effect in narrow-gap semiconductors
    Masuki, Ryota
    Nomoto, Takuya
    Arita, Ryotaro
    PHYSICAL REVIEW B, 2021, 103 (04)
  • [34] Problem of impurity states in narrow-gap lead telluride-based semiconductors
    L. I. Ryabova
    D. R. Khokhlov
    Journal of Experimental and Theoretical Physics Letters, 2004, 80 : 133 - 139
  • [35] ELECTRONIC-STRUCTURE OF GRAPHITE - EFFECT OF HYDROSTATIC-PRESSURE
    AHUJA, R
    AULUCK, S
    TRYGG, J
    WILLS, JM
    ERIKSSON, O
    JOHANSSON, B
    PHYSICAL REVIEW B, 1995, 51 (08): : 4813 - 4819
  • [36] ELECTRONIC-PROPERTIES OF BAND-INVERTED HETEROJUNCTIONS - SUPERSYMMETRY IN NARROW-GAP SEMICONDUCTORS
    PANKRATOV, OA
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 : S204 - S209
  • [37] Pressure and Temperature Effects on Point-Defect Equilibria and Band Gap of ZnS
    N. K. Morozova
    I. A. Karetnikov
    K. V. Golub
    E. M. Gavrishchuk
    E. V. Yashina
    V. G. Plotnichenko
    V. G. Galstyan
    Inorganic Materials, 2004, 40 : 1138 - 1145
  • [38] EFFECT OF HYDROSTATIC-PRESSURE ON PHOTOCONDUCTIVITY AND ELECTROLUMINESCENCE OF GAP-N
    WOLFE, MI
    KRESSEL, H
    HALPERN, T
    RACCAH, PM
    APPLIED PHYSICS LETTERS, 1974, 24 (06) : 279 - 281
  • [39] Pressure and temperature effects on point-defect equilibria and band gap of ZnS
    Morozova, NK
    Karetnikov, IA
    Golub, KV
    Gavrishchuk, EM
    Yashina, EV
    Plotnichenko, VG
    Galstyan, VG
    INORGANIC MATERIALS, 2004, 40 (11) : 1138 - 1145
  • [40] EFFECT OF LATTICE ANHARMONICITY ON DISPLACIVE PHASE-TRANSITION IN NARROW-GAP SEMICONDUCTORS
    NATORI, A
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1976, 41 (03) : 782 - 786
12345