HYDROSTATIC-PRESSURE EFFECT ON POINT-DEFECT ELECTRONIC STATES IN NARROW-GAP AND GAPLESS SEMICONDUCTORS

被引：10
|
作者：
STRIKHA, MV
VASKO, FT
机构：
[1] Institute of Semiconductor Physics, Ukrainian Academy of Sciences, Kiev
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1994年 / 181卷 / 01期
关键词：
D O I：
10.1002/pssb.2221810118
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A study is made of the influence of hydrostatic pressure on point defect states in narrow-gap and gapless semiconductors, described by the three-band Kane model. It is shown that shifts of energy levels of centres of different symmetry with pressure are different. The h-centre level follows strictly the v-band top. On the contrary, the 1-c level shift depends on pressure in a more complicated way, and is determined by system parameters. The transition from resonance to localized defect states due to the transition from gapless to narrow-gap semiconductors caused by hydrostatic pressure is also studied.
引用
收藏
页码：181 / 188
页数：8
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