LUMINESCENCE FROM SI1-XGEX/SI QUANTUM-WELLS GROWN BY SI MOLECULAR-BEAM EPITAXY

被引：20
|
作者：
FUKATSU, S
USAMI, N
SHIRAKI, Y
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期
关键词：
D O I：
10.1116/1.586732
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Luminescence from strained Si1-xGex/Si quantum wells (QWs) grown on Si substrates by Si molecular-beam epitaxy was studied. Influenece of the crystal quality on the luminescence efficiency was investigated by excitation dependence of luminescence intensity. Electroluminescence (EL) from coupled double QWs for the material system and the associated peak red shift is presented for the first time. Transverse-electric-polarized EL was observed from cleaved edge samples for the first time, showing that the optical transition in QW luminescence is due to electron-heavy hole recombination.
引用
收藏
页码：895 / 898
页数：4
相关论文
共 50 条
  • [31] NEAR-BAND-GAP PHOTOLUMINESCENCE OF SI1-XGEX ALLOYS GROWN ON SI(100) BY MOLECULAR-BEAM EPITAXY
    TERASHIMA, K
    TAJIMA, M
    TATSUMI, T
    APPLIED PHYSICS LETTERS, 1990, 57 (18) : 1925 - 1927
  • [32] OPTICAL-EMISSION FROM SI1-XGEX ALLOY LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    NORTHROP, GA
    IYER, SS
    WOLFORD, DJ
    DELAGE, SL
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S12 - S12
  • [33] ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE FROM SI1-XGEX ALLOYS GROWN ON (100) SILICON BY MOLECULAR-BEAM EPITAXY
    HOUGHTON, DC
    NOEL, JP
    ROWELL, NL
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 9 (1-3): : 237 - 244
  • [34] Photoluminescence lifetime and structure of molecular beam epitaxy porous Si1-xGex grown on Si
    Ünal, B.
    Parkinson, M.
    Bayliss, S.C.
    Naylor, T.
    Schröder, D.
    Journal of Porous Materials, 2000, 7 (01) : 143 - 146
  • [35] CHARACTERIZATION OF SI/SI1-XGEX/SI QUANTUM-WELLS BY SPACE-CHARGE SPECTROSCOPY
    SCHMALZ, K
    YASSIEVICH, IN
    RUCKER, H
    GRIMMEISS, HG
    FRANKENFELD, H
    MEHR, W
    OSTEN, HJ
    SCHLEY, P
    ZEINDL, HP
    PHYSICAL REVIEW B, 1994, 50 (19): : 14287 - 14301
  • [36] AMBIPOLAR DIFFUSION IN STRAINED SI1-XGEX(100) LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    GRIVICKAS, V
    NETIKSIS, V
    NOREIKA, D
    PETRAUSKAS, M
    WILLANDER, M
    NI, WX
    HASAN, MA
    HANSSON, GV
    SUNDGREN, JE
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) : 1471 - 1474
  • [37] Surface and structural characterization of Si1-xGex/Si alloys and multi-quantum wells grown by gas source molecular beam epitaxy
    Zou, LF
    Acosta-Ortíz, SE
    Regalado, LE
    Zou, LX
    Sarabia-Torres, J
    Pérez-Herrera, GA
    REVISTA MEXICANA DE FISICA, 2000, 46 (05) : 415 - 418
  • [38] Analysis of the gain and luminescence properties of Si/Si1-xGex:Er/Si heterostructures produced by sublimation molecular-beam epitaxy in a gas phase
    Krasil'nikova, LV
    Stepikhova, MV
    Drozdov, YN
    Drozdov, MN
    Krasil'nik, ZF
    Shengurov, VG
    Chalkov, VY
    Svetlov, SP
    Gusev, OB
    PHYSICS OF THE SOLID STATE, 2005, 47 (01) : 93 - 97
  • [39] SYSTEMATIC BLUE SHIFT OF EXCITON LUMINESCENCE IN STRAINED SI1-XGEX/SI QUANTUM-WELL STRUCTURES GROWN BY GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY
    FUKATSU, S
    YOSHIDA, H
    USAMI, N
    FUJIWARA, A
    TAKAHASHI, Y
    SHIRAKI, Y
    ITO, R
    THIN SOLID FILMS, 1992, 222 (1-2) : 1 - 4
  • [40] LUMINESCENCE STUDIES OF CONFINED EXCITONS IN PSEUDOMORPHIC SI/SIGE QUANTUM-WELLS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY
    BRUNNER, J
    NUTZEL, J
    GAIL, M
    MENCZIGAR, U
    ABSTREITER, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 1097 - 1100
12345