STUDY OF AG ADDITION TO YBA2CU3O7-X FILMS PREPARED USING ELECTROPHORETIC DEPOSITION

被引：8

作者：

FUJIMOTO, M

NOJIMA, H

SHINTAKU, H

TANIGUCHI, H

NAGATA, M

KOBA, M

机构：

[1] Functional Devices Laboratories, Sharp Corporation, Kashiwa, Chiba, 211

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 4B期

关键词：

ELECTROPHORETIC DEPOSITION; HIGH T(C) OXIDE SUPERCONDUCTOR; YBA2CU3O7-X AG DOPING; AG2O; CU SUBSTRATE; GRAIN GROWTH;

D O I：

10.1143/JJAP.32.L576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ag addition to YBa2Cu3O7-x superconducting films prepared using electrophoretic deposition on Cu substrates was investigated. The electrical characteristics of the films, such as zero-resistance temperature (T(c)), critical current density (J(c)), and resistivity at room temperature (rho) were greatly improved by Ag doping. The T(c) of 94 K was attained with the electrophoretic Ag-doped film on Cu substrate. By doping with Ag, the grain growth was enhanced but no shift in YBa2Cu3O7-x peaks was observed in X-ray diffraction patterns. From the electron probe microanalysis of the sample cross section, the doped Ag was found to exist in the region devoid of YBa2Cu3O7-x

引用

页码：L576 / L579

页数：4

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