CHARACTERIZATION OF THERMALLY OXIDIZED N+ POLYCRYSTALLINE SILICON

被引：58
|
作者：
FARAONE, L
VIBRONEK, RD
MCGINN, JT
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 03期
关键词：
D O I：
10.1109/T-ED.1985.21980
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：577 / 583
页数：7
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