CHARACTERIZATION OF THERMALLY OXIDIZED N+ POLYCRYSTALLINE SILICON

被引：58

|

作者：

FARAONE, L

VIBRONEK, RD

MCGINN, JT

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 03期

关键词：

D O I：

10.1109/T-ED.1985.21980

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：577 / 583

页数：7

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