STRUCTURAL DISORDER MODEL OF AMORPHOUS-SEMICONDUCTORS - GE AND SI

被引：5
|
作者：
VAID, BA
SHARMA, KC
机构：
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1984年 / 122卷 / 02期
关键词：
D O I：
10.1002/pssb.2221220205
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：423 / 429
页数：7
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