STRUCTURAL DISORDER MODEL OF AMORPHOUS-SEMICONDUCTORS - GE AND SI

被引：5

作者：

VAID, BA

SHARMA, KC

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1984年 / 122卷 / 02期

关键词：

D O I：

10.1002/pssb.2221220205

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：423 / 429

页数：7

共 50 条

[1] STRUCTURAL DISORDER MODEL FOR AMORPHOUS-SEMICONDUCTORS - A-SE
VAID, BA
SHARMA, KC
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 137 (02): : 433 - 440
[2] STRUCTURAL DISORDER MODEL OF AMORPHOUS-SEMICONDUCTORS - THERMODYNAMICS OF A-AS
VAID, BA
SHARMA, KC
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1985, 128 (01): : 93 - 98
[3] PHENOMENOLOGICAL MODEL OF AMORPHOUS-SEMICONDUCTORS
STEIN, DL
LICCIARDELLO, DC
MA, KB
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 414 - 414
[4] STRUCTURAL MODELS FOR AMORPHOUS-SEMICONDUCTORS AND INSULATORS
CONNELL, GAN
LUCOVSKY, G
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 468 - 469
[5] LOCAL STRUCTURAL ORDER IN AMORPHOUS-SEMICONDUCTORS
LANNIN, JS
PHYSICS TODAY, 1988, 41 (07) : 28 - 35
[6] STRUCTURAL MODELS FOR AMORPHOUS-SEMICONDUCTORS AND INSULATORS
CONNELL, GAN
LUCOVSKY, G
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1978, 31 (1-2) : 123 - 155
[7] POLYTOPE MODEL AND THE ELECTRONIC AND STRUCTURAL-PROPERTIES OF AMORPHOUS-SEMICONDUCTORS
MOSSERI, R
DIVINCENZO, DP
SADOC, JF
BRODSKY, MH
PHYSICAL REVIEW B, 1985, 32 (06) : 3974 - 4000
[8] DISORDER EFFECTS ON DEEP TRAPPING IN AMORPHOUS-SEMICONDUCTORS
STREET, RA
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (01): : L15 - L20
[9] THE STRUCTURAL DISORDER MODEL - PRESSURE-INDUCED TRANSITIONS IN THE SEMICONDUCTORS SI AND GE
DIXIT, PK
VAID, BA
SHARMA, KC
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 133 (01): : 71 - 74
[10] AMORPHOUS-SEMICONDUCTORS
EMIN, D
SCIENCE, 1977, 198 (4320) : 881 - 881

← 1 2 3 4 5 →