GROWTH-KINETICS AND PROPERTIES OF HETEROEPITAXIAL ZNTE FILMS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY

High quality (001) ZnTe films have been grown on (001) GaAs by metalorganic molecular beam epitaxy using thermally precracked diethylzinc and diethyltellurium. Reflection high-energy electron diffraction intensity oscillations were measured during the growth of ZnTe and were used to determine the growth kinetics as a function of substrate temperature and II/VI flux ratio. X-ray rocking curves with full widths at half maximum of approximately 200 arcsec have been measured for ZnTe films grown at 385-degrees-C under Zn-rich conditions. Secondary ion mass spectrometric analysis indicated that carbon contamination in the films was minimal. The photoluminescence spectra of the ZnTe layers measured at 5 K were dominated by features associated with free and bound excitons and exhibited weak deep level emission.