CALCULATIONS OF HIGH-SPEED PERFORMANCE FOR SUBMICROMETER ION-IMPLANTED GAAS-MESFET DEVICES

被引:7
|
作者
ABUSAID, MF [1 ]
HAUSER, JR [1 ]
机构
[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695
关键词
D O I
10.1109/T-ED.1986.22594
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:913 / 918
页数:6
相关论文
共 50 条
  • [21] MODELING AND CHARACTERIZATION OF ION-IMPLANTED GaAs MESFET's.
    Peczalski, Andrzej
    Chen, Chung-Hsu
    Shur, Michael S.
    Baier, Steven M.
    IEEE Transactions on Electron Devices, 1987, ED-34 (04) : 726 - 732
  • [22] NOISE PERFORMANCE OF LOW-POWER 0.25 MICRON GATE ION-IMPLANTED D-MODE GAAS-MESFET FOR WIRELESS APPLICATIONS
    APOSTOLAKIS, PJ
    MIDDLETON, JR
    SCHERRER, D
    FENG, M
    LEPORE, AN
    IEEE ELECTRON DEVICE LETTERS, 1994, 15 (07) : 239 - 241
  • [23] HIGH FREQUENCY DIVIDER CIRCUITS USING ION-IMPLANTED GaAs MESFET's.
    Andrade, T.
    Anderson, J.R.
    Electron device letters, 1985, EDL-6 (02): : 83 - 85
  • [24] ON THE SPEED AND NOISE PERFORMANCE OF DIRECT ION-IMPLANTED GAAS-MESFETS
    FENG, M
    LASKAR, J
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (01) : 9 - 17
  • [25] Systematic approach to modelling and parameter extraction of an ion-implanted GaAs MESFET
    Kwok, HL
    Wang, ZJ
    IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 1999, 146 (02): : 95 - 98
  • [26] ULTRAHIGH-FREQUENCY PERFORMANCE OF SUBMICROMETER-GATE ION-IMPLANTED GAAS-MESFETS
    WANG, GW
    FENG, M
    LAU, CL
    ITO, C
    LEPKOWSKI, TR
    IEEE ELECTRON DEVICE LETTERS, 1989, 10 (05) : 206 - 208
  • [27] PLANAR, ION-IMPLANTED BIPOLAR-DEVICES IN GAAS
    VAIDYANATHAN, KV
    JULLENS, RA
    ANDERSON, CL
    DUNLAP, HL
    SOLID-STATE ELECTRONICS, 1983, 26 (08) : 717 - 721
  • [28] GAAS MESFET - HIGH-SPEED OPTICAL DETECTOR
    BAACK, C
    ELZE, G
    WALF, G
    ELECTRONICS LETTERS, 1977, 13 (07) : 193 - 193
  • [30] HIGH-SPEED 1 MUM GAAS MESFET
    KOHN, E
    WULLER, R
    STAHLMANN, R
    BENEKING, H
    ELECTRONICS LETTERS, 1975, 11 (08) : 171 - 172