EFFECTS OF GROWTH-RATE ON PROPERTIES OF PB(ZR, TI)O3 THIN-FILMS GROWN BY CHEMICAL-VAPOR-DEPOSITION

被引：2

作者：

KATAYAMA, T

SHIMIZU, M

SHIOSAKI, T

机构：

[1] Department of Electronics, Kyoto University, Sakyo-ku Kyoto, 606, Yoshida-Honmachi

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 11A期

关键词：

PB(ZR; TI)O3; FILM; CHEMICAL VAPOR DEPOSITION; GROWTH RATE; DIELECTRIC CONSTANT; FERROELECTRIC PROPERTIES; FILM ORIENTATION; GRAIN SIZE;

D O I：

10.1143/JJAP.32.5062

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of the growth rate on the dielectric and ferroelectric properties are studied using tetragonal Pb(Zr, Ti)03 thin films grown by chemical vapor deposition. The growth rates of the films were controlled by changing the carrier flow rates and tank pressures for metallorganic sources. In particular, when the source tank pressures were changed, the growth rates were successfully controlled. The electrical properties of the films were dependent on the growth rate. With reduced growth rate, Pb(Zr, Ti)O3 films with higher dielectric constants and lower remanent polarizations were obtained. In order to clarify the cause of this effect, changes in the orientation and microstructures of the films were also investigated.

引用

页码：5062 / 5066

页数：5

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