DEPLETION LAYER CHARACTERISTICS NEAR THE SURFACE OF V-GROOVED HIGH-VOLTAGE P-N-JUNCTION

被引：0

作者：

CHANG, CY ^{[1
]}

LIU, WC ^{[1
]}

HSU, WC ^{[1
]}

FANG, YK ^{[1
]}

LIU, RC ^{[1
]}

机构：

[1] NATL CHENG KUNG UNIV, ELECTR & ELECT ENGN RES INST, TAINAN, TAIWAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C331 / C331

页数：1

共 50 条

[21] Effect of Proton Irradiation on the Breakdown Voltage of a High-Voltage p-n Junction
Paderov, V. P.
Silkin, D. S.
Goryachkin, V.
Khapugin, A. A.
Grishanin, A. V.
[J]. JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2017, 62 (06) : 616 - 620
[22] SPACE-CHARGE LAYER CAPACITANCE AND OFFSET VOLTAGE OF AN EXPONENTIAL-CONSTANT P-N-JUNCTION
HO, FD
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1991, 70 (02) : 327 - 342
[23] THE P-I-N JUNCTION SURFACE DEPLETION-LAYER PHOTODIODE
YIN, CS
[J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) : 442 - 443
[24] OPEN CIRCUIT VOLTAGE DECAY IN P-N-JUNCTION DIODES AT HIGH-LEVELS OF INJECTION
JAIN, SC
RAY, UC
MURALIDHARAN, R
TEWARY, VK
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (05) : 561 - 570
[25] DEPLETION-REGION WIDTH OF P-N-JUNCTION UNDER HIGH FORWARD-BIAS CONDITIONS
JAIN, LC
GARUD, GN
[J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1979, 126 (05): : 361 - 364
[26] FIELD DISTRIBUTION NEAR-SURFACE OF BEVELED P-N-JUNCTIONS IN HIGH-VOLTAGE DEVICES
CORNU, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) : 347 - 352
[27] OPEN-CIRCUIT VOLTAGE-DECAY BEHAVIOR IN P-N-JUNCTION DIODE AT HIGH INJECTION
GOPAL, R
DWIVEDI, R
SRIVASTAVA, SK
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (09) : 3476 - 3480
[28] The p-i-n junction-surface depletion-layer photodiode
[J]. Yin, Chang Song, 1600, (12):
[29] DEPLETION-REGION WIDTH OF A GAUSSIAN GRADED P-N-JUNCTION UNDER HIGH FORWARD BIAS CONDITIONS
JAIN, LC
GARUD, GN
[J]. AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1979, 33 (01): : 39 - 42
[30] CHARACTERISTICS OF MICROPLASMAS IN HIGH-VOLTAGE SILICON P-N-JUNCTIONS
KUZMIN, VA
KRYUKOVA, NN
KYUREGYAN, AS
SOROKIN, YG
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 766 - 769

← 1 2 3 4 5 →