共 50 条
- [1] HIGH TEMPERATURE ANNEALING OF GAMMA-RADIATION DEFECTS IN N-TYPE GERMANIUM [J]. SOVIET PHYSICS-SOLID STATE, 1964, 6 (06): : 1481 - 1488
- [2] HIGH TEMPERATURE ANNEALING OF GAMMA-RADIATION DEFFECTS IN N-TYPE GERMANIUM [J]. SOVIET PHYSICS SOLID STATE,USSR, 1964, 6 (06): : 1481 - +
- [3] ENERGY STRUCTURE OF GAMMA-RADIATION DEFECTS IN GERMANIUM [J]. SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (01): : 245 - &
- [4] INTERACTION OF LITHIUM WITH RADIATION DEFECTS IN PURE N-TYPE GERMANIUM [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (11): : 1910 - +
- [5] INFLUENCE OF TYPE OF GROUP V DOPANT ON ANNEALING OF GAMMA-RADIATION DEFECTS IN GERMANIUM [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (09): : 1229 - 1230
- [6] RADIATION DEFECTS IN GERMANIUM - RADIATION DEFECTS ANNEALED AT SIMILAR-TO-260-DEGREES-C IN N-TYPE GERMANIUM [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1992, 124 (04): : 429 - 435
- [7] CHANGES IN GAMMA-RADIATION DEFECTS IN LITHIUM-DOPED GERMANIUM [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (05): : 654 - 655
- [8] FORMATION OF GAMMA-RADIATION DEFECTS IN PHOSPHORUS-DOPED GERMANIUM [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (11): : 1947 - +
- [9] INVESTIGATION OF GAMMA-RADIATION DEFECTS IN HIGH-PURITY GERMANIUM [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (06): : 880 - +