共 50 条
- [1] HIGH TEMPERATURE ANNEALING OF GAMMA-RADIATION DEFFECTS IN N-TYPE GERMANIUM [J]. SOVIET PHYSICS SOLID STATE,USSR, 1964, 6 (06): : 1481 - +
- [2] CAPACITANCE SPECTROSCOPY OF GAMMA-RADIATION DEFECTS IN N-TYPE GERMANIUM [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (03): : 322 - 324
- [3] INFLUENCE OF TYPE OF GROUP V DOPANT ON ANNEALING OF GAMMA-RADIATION DEFECTS IN GERMANIUM [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (09): : 1229 - 1230
- [4] INVESTIGATION OF GAMMA-RADIATION DEFECTS IN HIGH-PURITY GERMANIUM [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (06): : 880 - +
- [5] ANNEALING OF ELECTRON-INDUCED DEFECTS IN N-TYPE GERMANIUM [J]. PHYSICAL REVIEW B, 1983, 28 (06): : 3372 - 3377
- [6] ANNEALING OF IRRADIATION DEFECTS IN LIGHTLY DOPED N-TYPE GERMANIUM [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (06): : 848 - &
- [7] ENERGY STRUCTURE OF GAMMA-RADIATION DEFECTS IN GERMANIUM [J]. SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (01): : 245 - &
- [10] INTERACTION OF LITHIUM WITH RADIATION DEFECTS IN PURE N-TYPE GERMANIUM [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (11): : 1910 - +