SUPERCURRENT TRANSPORT THROUGH A HIGH-MOBILITY 2-DIMENSIONAL ELECTRON-GAS

被引：39
|
作者：
MARSH, AM [1 ]
WILLIAMS, DA [1 ]
AHMED, H [1 ]
机构：
[1] UNIV CAMBRIDGE,CAVENDISH LAB,HITACHI CAMBRIDGE LAB,CAMBRIDGE CB3 0HE,ENGLAND
来源：
PHYSICAL REVIEW B | 1994年 / 50卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.50.8118
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We demonstrate that a supercurrent can flow through a high-mobility two-dimensional electron gas (2DEG) between two superconducting contacts 1 mu m apart. The AlxGa1-xAs/GaAs channel length is over 10 times the proximity-effect-induced coherence length in the semiconductor, and electrons travel ballistically between the contacts. The supercurrent is destroyed when the mobility of the 2DEG is reduced by electron-beam irradiation, suggesting that the supercurrent results from coherent Andreev reflection and ballistic transport between the superconducting electrodes.
引用
收藏
页码：8118 / 8121
页数：4
相关论文
共 50 条
  • [41] QUANTUM AND TRANSPORT ELECTRON-MOBILITY IN THE INDIVIDUAL SUBBANDS OF A 2-DIMENSIONAL ELECTRON-GAS IN SI-DELTA-DOPED GAAS
    KOENRAAD, PM
    VANHEST, BFA
    BLOM, FAP
    VANDALEN, R
    LEYS, M
    PERENBOOM, JAAJ
    WOLTER, JH
    PHYSICA B, 1992, 177 (1-4): : 485 - 490
  • [42] CONDUCTANCE OF A POINT CONTACT IN 2-DIMENSIONAL ELECTRON-GAS WITH HIGH BIAS
    FEDIRKO, VA
    RYZHII, VI
    VYURKOV, VV
    FIZIKA NIZKIKH TEMPERATUR, 1992, 18 (06): : 651 - 652
  • [43] QUANTUM CORRECTIONS TO CONDUCTIVITY OBSERVED AT INTERMEDIATE MAGNETIC-FIELDS IN A HIGH-MOBILITY GAAS ALXGA1-XAS 2-DIMENSIONAL ELECTRON-GAS
    TABORYSKI, R
    VEJE, E
    LINDELOF, PE
    PHYSICAL REVIEW B, 1990, 41 (05): : 3287 - 3290
  • [44] FABRICATION OF HIGH-MOBILITY 2-DIMENSIONAL ELECTRON AND HOLE GASES IN GESI/SI
    XIE, YH
    FITZGERALD, EA
    MONROE, D
    SILVERMAN, PJ
    WATSON, GP
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) : 8364 - 8370
  • [45] ROOM-TEMPERATURE DETERMINATION OF 2-DIMENSIONAL ELECTRON-GAS CONCENTRATION AND MOBILITY IN HETEROSTRUCTURES
    SCHACHAM, SE
    MENA, RA
    HAUGLAND, EJ
    ALTEROVITZ, SA
    APPLIED PHYSICS LETTERS, 1993, 62 (11) : 1283 - 1285
  • [46] INFLUENCE OF SI SEGREGATION ON THE 2-DIMENSIONAL ELECTRON-GAS MOBILITY OF INVERTED HEMT STRUCTURES
    MAIER, M
    HIESINGER, P
    KOHLER, K
    JANTZ, W
    VACUUM, 1991, 42 (12) : 745 - 748
  • [47] EVOLUTION OF ELECTRON-BEAMS IN 2-DIMENSIONAL ELECTRON-GAS
    GURZHI, RN
    KALINENKO, AN
    KOPELIOVICH, AI
    FIZIKA NIZKIKH TEMPERATUR, 1995, 21 (04): : 462 - 464
  • [48] FORMATION OF HIGH-MOBILITY 2-DIMENSIONAL ELECTRON-GAS AT ETCH-REGROWN ALGAAS/GAAS INTERFACE PREPARED BY CHLORINE GAS ETCHING AND MBE IN AN UHV MULTICHAMBER SYSTEM
    KADOYA, Y
    NOGE, H
    KANO, H
    SAKAKI, H
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 877 - 880
  • [49] HIGH-MOBILITY TWO-DIMENSIONAL ELECTRON-GAS STRUCTURE FOR MODULATION-DOPED GAAS TRANSISTORS
    CHRISTOU, A
    VARMAZIS, K
    HATZOPOULOS, Z
    APPLIED PHYSICS LETTERS, 1987, 50 (14) : 935 - 936
  • [50] COUPLING BETWEEN MAGNETOPLASMON AND CYCLOTRON MODES IN A VERY HIGH-MOBILITY TWO-DIMENSIONAL ELECTRON-GAS
    HUANT, S
    MARTINEZ, G
    ETIENNE, B
    EUROPHYSICS LETTERS, 1989, 9 (04): : 397 - 402
12345