EXACT SCALING FORM FOR THE COLLAPSED 2D POLYMER PHASE - REPLY

被引：15
|
作者：
OWCZAREK, AL
PRELLBERG, T
BRAK, R
机构：
来源：
PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 25期
关键词：
D O I：
10.1103/PhysRevLett.71.4275
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：4275 / 4275
页数：1
相关论文
共 50 条
  • [41] EXACT DIAGONALIZATION STUDIES OF 2D QUANTUM MODELS
    POILBLANC, D
    HELVETICA PHYSICA ACTA, 1992, 65 (2-3): : 268 - 277
  • [42] A scaling relation for warm-phase orographic precipitation: a Lagrangian analysis for 2D mountains
    Miltenberger, Annette K.
    Seifert, Axel
    Joos, Hanna
    Wernli, Heini
    QUARTERLY JOURNAL OF THE ROYAL METEOROLOGICAL SOCIETY, 2015, 141 (691) : 2185 - 2198
  • [43] Gravitational form factors and decoupling in 2D
    Ribeiro, Tiago G.
    Shapiro, Ilya L.
    Zanusso, Omar
    PHYSICS LETTERS B, 2018, 782 : 324 - 331
  • [44] Predictive Modeling for 2D Form Design
    Arisoy, Erhan Batuhan
    Orbay, Gunay
    Kara, Levent Burak
    COMPUTATIONAL MODELING OF OBJECTS PRESENTED IN IMAGES: FUNDAMENTALS, METHODS, AND APPLICATIONS, 2014, 8641 : 286 - 291
  • [45] Finite-Entanglement Scaling of 2D Metals
    Mortier, Quinten
    Li, Ming-Hao
    Haegeman, Jutho
    Bultinck, Nick
    PHYSICAL REVIEW LETTERS, 2023, 131 (26)
  • [46] Multi-scaling of 2D impact fragmentation
    Katsuragi, H
    Sugino, D
    Honjo, H
    PHYSICS OF COMPLEX SYSTEMS (NEW ADVANCES AND PERSPECTIVES), 2004, 155 : 443 - 446
  • [47] Scaling Theory of Electrically Doped 2D Transistors
    Ilatikhameneh, Hesameddin
    Klimeck, Gerhard
    Appenzeller, Joerg
    Rahman, Rajib
    IEEE ELECTRON DEVICE LETTERS, 2015, 36 (07) : 726 - 728
  • [48] 2D Galilean field theories with anisotropic scaling
    Chen, Bin
    Hao, Peng-Xiang
    Yu, Zhe-fei
    PHYSICAL REVIEW D, 2020, 101 (06)
  • [49] Scaling analysis of 2D fractal cellular structures
    Schliecker, G
    JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL, 2001, 34 (01): : 25 - 36
  • [50] Scaling Directions for 2D and 3D NAND Cells
    Goda, Akira
    Parat, Krishna
    2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2012,
12345