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MIXING AND CHEMICAL EFFECTS IN SIMS DEPTH PROFILING THE SI/SIO2 INTERFACE
被引:8
|
作者
:
ANDERLE, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
ANDERLE, M
[
1
]
LOXTON, CM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
LOXTON, CM
[
1
]
机构
:
[1]
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源
:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
|
1986年
/ 15卷
/ 1-6期
关键词
:
D O I
:
10.1016/0168-583X(86)90281-8
中图分类号
:
TH7 [仪器、仪表];
学科分类号
:
0804 ;
080401 ;
081102 ;
摘要
:
引用
收藏
页码:186 / 188
页数:3
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