INTERDIFFUSION AND COMPOUND FORMATION IN THE AU-PD-SI THIN-FILM SYSTEM

The process of interdiffusion and compound formation in the AuPdSi thin film system was studied in the temperature range of 25 to 250°C for different annealing times using Auger Electron Spectroscopy. We have observed that for the as-deposited samples there is already reaction forming an approximately 150 Å thick Pd2Si layer at the interface PdSi. This initial silicide layer does not grow at room temperature even for samples stored for more than a year. Thermal annealing at 250°C leads to the consumption of the whole Pd film forming Pd2Si. At the AuPd interface no significant interaction seems to occur until all the Pd film has reacted to form Pd2Si. In contrast, after completing the Pd2Si layer, strong diffusion of gold takes place through the Pd2Si layer toward the Pd2SiSi interface. © 1990.