P-I-N JUNCTION IN EVAPORATED A-SI

被引：0
|
作者：
OCHIAI, Y
机构：
[1] Univ of Tsukuba, Inst of Materials, Science, Sakura-mura, Jpn, Univ of Tsukuba, Inst of Materials Science, Sakura-mura, Jpn
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 87卷 / 01期
关键词：
D O I：
10.1002/pssa.2210870164
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A p-i-n junction is constructed by double implantation since an intrinsic layer due to the compensation effect is produced between fluorine ion implanted regions.
引用
收藏
页码：K101 / K104
页数：4
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