A 256 KBIT DYNAMIC RAM IN 2-MU-M POLYCIDE GATE TECHNOLOGY WITH LASER REDUNDANCY

被引：0
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作者：
MULLER, W
DEPPE, H
KANTZ, D
BEINVOGL, W
GRIESSING, J
HEBBEKER, H
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SIEMENS FORSCHUNGS-UND ENTWICKLUNGSBERICHTE-SIEMENS RESEARCH AND DEVELOPMENT REPORTS | 1984年 / 13卷 / 05期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：202 / 207
页数：6
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