DEPENDENCE OF PULSED 10.6-MU-M LASER DAMAGE THRESHOLD ON MANNER IN WHICH A SAMPLE IS IRRADIATED

被引：13

作者：

BASS, M ^{[1
]}

LEUNG, KM ^{[1
]}

机构：

[1] UNIV SO CALIF,CTR LASER STUDIES,LOS ANGELES,CA 90007

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1976年 / 12卷 / 02期

关键词：

D O I：

10.1109/JQE.1976.1069098

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：82 / 83

页数：2

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