DEPENDENCE OF PULSED 10.6-MU-M LASER DAMAGE THRESHOLD ON MANNER IN WHICH A SAMPLE IS IRRADIATED

被引：13
|
作者：
BASS, M [1 ]
LEUNG, KM [1 ]
机构：
[1] UNIV SO CALIF,CTR LASER STUDIES,LOS ANGELES,CA 90007
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1976年 / 12卷 / 02期
关键词：
D O I：
10.1109/JQE.1976.1069098
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：82 / 83
页数：2
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