CARRIER LIFETIME VERSUS ION-IMPLANTATION DOSE IN SILICON ON SAPPHIRE

被引：168
|
作者：
DOANY, FE
GRISCHKOWSKY, D
CHI, CC
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 08期
关键词：
D O I：
10.1063/1.98173
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：460 / 462
页数：3
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