DOSE AND DAMAGE MEASUREMENTS IN LOW-DOSE ION-IMPLANTATION IN SILICON BY PHOTOACOUSTIC DISPLACEMENT AND MINORITY-CARRIER LIFETIME

被引：16
|
作者：
WASHIDZU, G
HARA, T
ICHIKAWA, R
TAKAMATSU, H
SUMIE, S
NISHIMOTO, Y
NAKAI, Y
HASHIZUME, H
MIYOSHI, T
机构：
[1] KOBE STEEL LTD, ELECTR RES LAB, NISHI KU, KOBE 65122, JAPAN
[2] LEO CORP, NISHI KU, KOBE 65122, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 6A期
关键词：
ION IMPLANTATION; DAMAGE; LASER BEAM; LIFETIME; DOSE MONITOR;
D O I：
10.1143/JJAP.30.L1025
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photo-acoustic displacement (PAD) generated with a modulated laser beam pumping is studied for As+ or B+ implanted Si. At doses above 1 x 10(13) ions/cm2, the PAD has a close relationship to damage density. An ion implantation dose down to 2 x 10(9) ions/cm2 can be detected by the PAD measurement. Doses below 2 x 10(10) ions/cm2 can be monitored by minority carrier lifetime measurement. A non-destructive high-sensitive dose monitor can be achieved by the PAD and minority carrier lifetime measurements. This monitoring leads to tight control of the threshold voltage of a MOS transistor.
引用
收藏
页码：L1025 / L1027
页数：3
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