RECOMBINATION-INDUCED MIGRATION OF POINT-DEFECTS IN SILICON

被引：0
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作者：
WATKINS, GD
CHATTERJEE, AP
HARRIS, RD
TROXELL, JR
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来源：
SEMICONDUCTORS AND INSULATORS | 1983年 / 5卷 / 3-4期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：321 / 336
页数：16
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