RECOMBINATION-INDUCED MIGRATION OF POINT-DEFECTS IN SILICON

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作者：

WATKINS, GD

CHATTERJEE, AP

HARRIS, RD

TROXELL, JR

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SEMICONDUCTORS AND INSULATORS | 1983年 / 5卷 / 3-4期

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TM [电工技术]; TN [电子技术、通信技术];

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0808 ; 0809 ;

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页码：321 / 336

页数：16

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