BINDING-ENERGY AND SPECTRAL WIDTH OF SI 2P CORE EXCITONS IN SIXGE1-X ALLOYS

被引:19
|
作者
KRISHNAMURTHY, S [1 ]
SHER, A [1 ]
CHEN, AB [1 ]
机构
[1] AUBURN UNIV,DEPT PHYS,AUBURN,AL 36849
关键词
D O I
10.1103/PhysRevLett.55.320
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:320 / 323
页数:4
相关论文
共 50 条
  • [31] Surface Morphology and Si 2p Binding Energy Investigation of Multilayer Porous Silicon Nanostructure
    Radzi, A. A. S. M.
    Yarmo, M. A.
    Rusop, M.
    Abdullah, S.
    ADVANCED X-RAY CHARACTERIZATION TECHNIQUES, 2013, 620 : 17 - +
  • [32] Oxidation of the H-Si(111)-1 x 1 surface: high resolution Si 2p core-level spectroscopy with synchrotron radiation
    Jolly, F
    Rochet, F
    Dufour, G
    Grupp, C
    Taleb-Ibrahimi, A
    SURFACE SCIENCE, 2000, 463 (02) : 102 - 108
  • [33] HEAT OF MIXING IN HFCXN1-X COMPOUNDS FROM XPS CORE LEVEL BINDING-ENERGY SHIFTS
    STEINER, P
    HUFNER, S
    SOLID STATE COMMUNICATIONS, 1982, 44 (08) : 1305 - 1307
  • [34] FREE-EXCITON BINDING-ENERGY IN STRAINED GEXSI1-X/SI QUANTUM-WELLS
    SHEN, WZ
    TANG, WG
    SHEN, SC
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1995, 189 (02): : K45 - K47
  • [35] High resolution syncrotron radiation Si 2p core-level spectroscopy of Si(110)16x2
    Cricenti, A
    LeLay, G
    Aristov, VY
    Nesterenko, B
    Safta, N
    Lacharme, JP
    Sebenne, CA
    TalebIbrahimi, A
    Indlekofer, G
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1995, 76 : 613 - 617
  • [36] SixGe1-x Ultrahigh-vacuum chemical vapor deposition on Si(111)-(7 x 7) from GeH4/Si2H6 mixtures
    Rauscher, H
    Braun, J
    Behm, RJ
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2003, 76 (05): : 711 - 719
  • [37] DIRECT EXCITON BINDING-ENERGY IN CDGA2(SXSE1-X)4
    CHIZHIKOV, VI
    PANYUTIN, VL
    PONEDELNIKOV, BE
    ROZENSON, AE
    JOURNAL DE PHYSIQUE, 1981, 42 (07): : 1003 - 1006
  • [38] High-resolution Si 2p core-level and low-energy electron diffraction studies of the Ca/Si(111)-(3 x 2) surface
    Sakamoto, K
    Takeyama, W
    Zhang, HM
    Uhrberg, RIG
    SURFACE SCIENCE, 2003, 532 : 628 - 632
  • [39] COMPOSITIONALLY DEPENDENT Si 2p BINDING ENERGY SHIFTS IN SILICON OXYNITRIDE THIN FILMS.
    Brow, Richard K.
    Pantano, Carlo G.
    1600, (69):
  • [40] First-principles study of Si 2p core-level shifts at water and hydrogen covered Si(001)2x1 surfaces
    Pasquarello, A
    Hybertsen, MS
    Car, R
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (04): : 2809 - 2811