THE DOPING EFFICIENCY IN AMORPHOUS-SILICON AND GERMANIUM

被引：33

作者：

STUTZMANN, M ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1986年 / 53卷 / 01期

关键词：

D O I：

10.1080/13642818608238962

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L15 / L21

页数：7

共 50 条

[1] DETAILED INVESTIGATION OF DOPING IN HYDROGENATED AMORPHOUS-SILICON AND GERMANIUM
STUTZMANN, M
BIEGELSEN, DK
STREET, RA
[J]. PHYSICAL REVIEW B, 1987, 35 (11): : 5666 - 5701
[2] DOPING OF AMORPHOUS-SILICON
GOLIKOVA, OA
MEZDROGINA, MM
KUDOYAROVA, VK
SEREGIN, PP
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (08): : 889 - 891
[3] BIAS DEPENDENCE OF DOPING EFFICIENCY IN HYDROGENATED AMORPHOUS-SILICON
ALVAREZ, F
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 960 - 962
[4] DOPING EFFECTS IN AMORPHOUS-SILICON
BEYER, W
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 1 - 12
[5] DOPING EFFICIENCY IN RF-SPUTTERED HYDROGENATED AMORPHOUS-SILICON
JOUSSE, D
BRUYERE, JC
BUSTARRET, E
DENEUVILLE, A
[J]. PHILOSOPHICAL MAGAZINE LETTERS, 1987, 55 (01) : 41 - 46
[6] AMORPHOUS-SILICON DOPING SUPERLATTICES
AGARWAL, SC
GUHA, S
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 1097 - 1100
[7] TIN DOPING IN AMORPHOUS-SILICON
SIDOROVA, TA
GOLIKOVA, OA
ANDREEV, AA
GUTS, ZA
ABLOVA, MS
FEIGELMAN, VA
VINOGRADOV, AY
[J]. INORGANIC MATERIALS, 1984, 20 (07): : 927 - 930
[8] THE DOPING MECHANISM IN AMORPHOUS-SILICON
NICHOLS, CS
YANG, LH
FONG, CY
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 495 - 498
[9] DEFECTS IN AMORPHOUS-SILICON GERMANIUM ALLOYS
FORTMANN, CM
TU, JC
[J]. CONFERENCE RECORD OF THE TWENTIETH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1988, VOLS 1-2, 1988, : 139 - 142
[10] ION-IMPLANTATION DOPING OF AMORPHOUS-SILICON CONTAINING ISOVALENT GERMANIUM IMPURITIES
KHOKHLOV, AF
MASHIN, AI
ERSHOV, AV
MASHIN, NI
IGNATEVA, EA
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (08): : 959 - 961

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