EPITAXIAL SILICON GROWTH IN A REDUCED PRESSURE AND TEMPERATURE CVD REACTOR

被引：1
|
作者：
REGOLINI, JL
BENSAHEL, D
MERCIER, J
SCHEID, E
机构：
[1] CNRS,ETUD PROPRIETES ELECTR SOLIDES,F-38042 GRENOBLE,FRANCE
[2] CNRS,LPCS,F-38042 GRENOBLE,FRANCE
来源：
JOURNAL DE PHYSIQUE | 1989年 / 50卷 / C-5期
关键词：
D O I：
10.1051/jphyscol:1989561
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：519 / 527
页数：9
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