EPITAXIAL SILICON GROWTH IN A REDUCED PRESSURE AND TEMPERATURE CVD REACTOR

被引：1
|
作者：
REGOLINI, JL
BENSAHEL, D
MERCIER, J
SCHEID, E
机构：
[1] CNRS,ETUD PROPRIETES ELECTR SOLIDES,F-38042 GRENOBLE,FRANCE
[2] CNRS,LPCS,F-38042 GRENOBLE,FRANCE
来源：
JOURNAL DE PHYSIQUE | 1989年 / 50卷 / C-5期
关键词：
D O I：
10.1051/jphyscol:1989561
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：519 / 527
页数：9
相关论文
共 50 条
  • [1] REDUCED PRESSURE AND TEMPERATURE EPITAXIAL SILICON CVD KINETICS AND APPLICATIONS
    REGOLINI, JL
    BENSAHEL, D
    MERCIER, J
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (10) : 1075 - 1081
  • [2] EPITAXIAL SILICON LAYERS MADE BY REDUCED PRESSURE TEMPERATURE CVD
    REGOLINI, JL
    BENSAHEL, D
    MERCIER, J
    DANTERROCHES, C
    PERIO, A
    LASER- AND PARTICLE-BEAM CHEMICAL PROCESSES ON SURFACES, 1989, 129 : 609 - 613
  • [3] CHARACTERIZATION OF EPITAXIAL SILICON LAYERS MADE BY REDUCED PRESSURE TEMPERATURE CVD
    REGOLINI, JL
    BENSAHEL, D
    SCHEID, E
    PERIO, A
    MERCIER, J
    APPLIED SURFACE SCIENCE, 1989, 36 (1-4) : 673 - 680
  • [4] SILICON SELECTIVE EPITAXIAL-GROWTH AT REDUCED PRESSURE AND TEMPERATURE
    REGOLINI, JL
    BENSAHEL, D
    MERCIER, J
    SCHEID, E
    JOURNAL OF CRYSTAL GROWTH, 1989, 96 (03) : 505 - 512
  • [5] Modeling and simulation of silicon epitaxial growth in Siemens CVD reactor
    Ni, Haoyin
    Lu, Shijie
    Chen, Caixia
    JOURNAL OF CRYSTAL GROWTH, 2014, 404 : 89 - 99
  • [6] Modeling of silicon epitaxial growth with SiHCl3 in a CVD barrel reactor at atmospheric pressure
    de Paola, E
    Duverneuil, P
    Langlais, A
    Nguyen, M
    JOURNAL DE PHYSIQUE IV, 1999, 9 (P8): : 221 - 228
  • [7] LOW-TEMPERATURE EPITAXIAL SILICON GROWTH-KINETICS IN A LOW-PRESSURE PLASMA-ENHANCED CVD REACTOR
    COMFORT, JH
    REIF, R
    SAWIN, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) : C471 - C471
  • [8] PHOSPHORUS INCORPORATION DURING SILICON EPITAXIAL-GROWTH IN A CVD REACTOR
    REIF, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) : 1122 - 1128
  • [9] Numerical simulation of silicon epitaxial growth in a single-wafer CVD reactor
    Yasuhiro, S
    Shin, YS
    Imaishi, N
    Akiyama, Y
    KAGAKU KOGAKU RONBUNSHU, 2004, 30 (01) : 22 - 28
  • [10] THIN SILICON EPITAXIAL LAYER DEPOSITION WITH REDUCED PRESSURE RTP-CVD
    WONG, F
    CHEN, CY
    KU, YH
    RAPID THERMAL ANNEALING / CHEMICAL VAPOR DEPOSITION AND INTEGRATED PROCESSING, 1989, 146 : 27 - 33
12345