ELECTRICAL-PROPERTIES OF DONORS IN GALLIUM-PHOSPHIDE

被引:5
|
作者
PODOR, B
PFEIFER, J
CSONTOS, L
NADOR, N
DEAK, F
机构
[1] HUNGARIAN ACAD SCI, INORGAN CHEM RES LAB, H-1361 BUDAPEST 5, HUNGARY
[2] HUNGARIAN ACAD SCI, TECH PHYS RES LAB, H-1361 BUDAPEST 5, HUNGARY
[3] ROLAND EOTVOS UNIV, DEPT ATOM PHYS, BUDAPEST, HUNGARY
关键词
D O I
10.1002/pssa.2210760236
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:695 / 704
页数:10
相关论文
共 50 条
  • [41] INTENSE PHOTOLUMINESCENCE IN POROUS GALLIUM-PHOSPHIDE
    BELOGOROKHOV, AI
    KARAVANSKII, VA
    OBRAZTSOV, AN
    TIMOSHENKO, VY
    [J]. JETP LETTERS, 1994, 60 (04) : 274 - 279
  • [42] CONDUCTIVITY RELAXATION IN THE IRRADIATED GALLIUM-PHOSPHIDE
    LITOVCHENKO, PG
    MAKARENKO, VG
    OPILAT, VY
    TARTACHNIK, VP
    TYCHINA, II
    [J]. UKRAINSKII FIZICHESKII ZHURNAL, 1988, 33 (03): : 387 - 390
  • [43] OPTICAL STUDIES OF VANADIUM IN GALLIUM-PHOSPHIDE
    ULRICI, W
    EAVES, L
    FRIEDLAND, K
    HALLIDAY, DP
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1987, 141 (01): : 191 - 202
  • [44] ELECTROFAX PRINTING WITH GALLIUM-PHOSPHIDE DIODES
    HARTMAN, J
    HUTTER, EC
    LADANY, I
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (10) : 1090 - &
  • [45] CRYOGENIC GALLIUM-PHOSPHIDE ACOUSTOOPTIC DEFLECTORS
    FUSS, I
    SMART, D
    [J]. APPLIED OPTICS, 1991, 30 (31): : 4526 - 4527
  • [46] SURFACE-STATES ON GALLIUM-PHOSPHIDE
    NORMAN, D
    MCGOVERN, IT
    NORRIS, C
    [J]. PHYSICS LETTERS A, 1977, 63 (03) : 384 - 386
  • [47] ELECTRONIC STATES OF OXYGEN IN GALLIUM-PHOSPHIDE
    MORGAN, TN
    [J]. PHYSICAL REVIEW B, 1984, 29 (10): : 5667 - 5678
  • [48] THE ELECTRONIC STATES OF OXYGEN IN GALLIUM-PHOSPHIDE
    MORGAN, TN
    [J]. PHYSICA B & C, 1983, 117 (MAR): : 146 - 148
  • [49] LATTICE-DYNAMICS OF GALLIUM-PHOSPHIDE
    BORCHERDS, PH
    KUNC, K
    ALFREY, GF
    HALL, RL
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (22): : 4699 - 4706
  • [50] TUNNELING IN GALLIUM-PHOSPHIDE SCHOTTKY DIODES
    KABANOVA, IS
    KOSYACHENKO, LA
    MAKHNII, VP
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (11): : 1265 - 1267