Microstrip gas chambers on implanted substrates

被引：1

作者：

Pallares, A ^{[1
]}

Barthe, S ^{[1
]}

Bergtold, AM ^{[1
]}

Brom, JM ^{[1
]}

Cailleret, J ^{[1
]}

Christophel, E ^{[1
]}

Coffin, J ^{[1
]}

Eberle, H ^{[1
]}

Fang, R ^{[1
]}

Fontaine, JC ^{[1
]}

Geist, W ^{[1
]}

Kachelhoffer, T ^{[1
]}

Levy, JM ^{[1
]}

Mack, V ^{[1
]}

Schunck, JP ^{[1
]}

Sigward, MH ^{[1
]}

机构：

[1] LAB PHASE,CNRS,UPR 292,F-67037 STRASBOURG 2,FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1995年 / 367卷 / 1-3期

关键词：

D O I：

10.1016/0168-9002(95)00568-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have studied the performance of several Microstrip Gas Chamber (MSGC) prototypes made on standard Desag D263 boron implanted glass. The purpose of the implantation is to reduce the surface resistance. The long term stability of this implantation has been measured under applied bias voltage. Comparative tests have been carried out on prototypes made on implanted and unimplanted detectors under electron (Sr-90) and X-ray (8 keV) irradiation. The total dose was approximately 7 mC/cm.

引用

页码：185 / 188

页数：4

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