PHOTOLUMINESCENCE SPECTROSCOPY OF CDTE EPILAYERS GROWN BY RF MAGNETRON SPUTTERING

被引：7
|
作者：
DAS, SR [1 ]
COOK, JG [1 ]
ROWELL, NL [1 ]
AOUADI, MS [1 ]
机构：
[1] UNIV OTTAWA,DEPT PHYS,OTTAWA K1N 6N5,ONTARIO,CANADA
来源：
JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 11期
关键词：
D O I：
10.1063/1.346950
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoluminescence spectra are measured for sputter-deposited, heteroepitaxial (100)CdTe layers of thicknesses up to 14 μm grown on (100)KBr substrates. Three emission bands, at 0.81, 1.00, and 1.41 eV, are observed. From comparison of the photoluminescence spectra of the epilayers with those of several bulk single-crystal and polycrystalline samples, the origin of the 1.41-eV band, reported previously by many workers, is correlated to structural defects arising from lattice mismatch with the substrate. It is concluded that the 0.81- and 1.00-eV bands are due to defect levels resulting from nonstoichiometric growth. The injection level and temperature dependence of the photoluminescence suggest that the 1.41- and 0.81-eV emissions are donor-acceptor transitions whereas the 1.00- eV emission is a conduction-band-acceptor transition.
引用
收藏
页码：5796 / 5803
页数：8
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