ANALYSIS OF YTTERBIUM ARSENIDE FILMS GROWN ON GAAS BY MOLECULAR-BEAM EPITAXY

被引：41
|
作者：
RICHTER, HJ
SMITH, RS
HERRES, N
SEELMANNEGGEBERT, M
WENNEKERS, P
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 02期
关键词：
D O I：
10.1063/1.100361
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：99 / 101
页数：3
相关论文
共 50 条
  • [41] SEMIINSULATING GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    KORDOS, P
    FORSTER, A
    BETKO, J
    MORVIC, M
    NOVAK, J
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (07) : 983 - 985
  • [42] UNINTENTIONAL INDIUM INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    MYERS, DR
    DAWSON, LR
    KLEM, JF
    BRENNAN, TM
    HAMMONS, BE
    SIMONS, DS
    COMAS, J
    PELLEGRINO, J
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (22) : 2321 - 2323
  • [43] CHARACTERIZATION OF SURFACE FACETING ON (110)GAAS/GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    ALLEN, LTP
    WEBER, ER
    WASHBURN, J
    PAO, YC
    ELLIOT, AG
    [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 87 (2-3) : 193 - 200
  • [44] HETEROSTRUCTURES OF GAAS1-XSBX ON GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    ZHAO, JH
    JEONG, JC
    SCHLESINGER, TE
    MILNES, AG
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C379 - C379
  • [45] PICOSECOND PHOTOCONDUCTIVITY IN POLYCRYSTALLINE GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY
    MORSE, JD
    MARIELLA, RP
    ADKISSON, JW
    ANDERSON, GD
    HARRIS, JS
    DUTTON, RW
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (12) : 1382 - 1384
  • [46] Effect of Uncontrollable Impurities on the Electric Properties of GaAs Films Grown by Molecular-Beam Epitaxy.
    Dvoryankina, G.G.
    Dvoryankin, V.F.
    Varaksin, G.A.
    Petrov, A.G.
    Kudryashov, A.A.
    Shemet, V.V.
    Yassen, M.L.
    [J]. Neorganiceskie materialy, 1986, 22 (03): : 371 - 375
  • [47] PHOTOREFLECTANCE CHARACTERIZATION OF CDTE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS(100)
    MELENDEZLIRA, M
    HERNANDEZCALDERON, I
    NILES, DW
    HOCHST, H
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 58 (03): : 219 - 222
  • [48] IMPROVEMENT IN THE CRYSTALLINE QUALITY OF HETEROEPITAXIAL GAAS ON SI FILMS GROWN BY MODULATED MOLECULAR-BEAM EPITAXY
    LEE, HP
    LIU, XM
    WANG, S
    GEORGE, T
    WEBER, ER
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (26) : 2695 - 2697
  • [49] THE MICROSTRUCTURE OF FE AND AG THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS (001)
    CHIEN, CJ
    BRAVMAN, JC
    FARROW, RFC
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) : 4343 - 4345
  • [50] A STUDY OF THE BEHAVIOR OF TIN ATOMS ON DOPING GAAS (100) FILMS GROWN BY MOLECULAR-BEAM EPITAXY
    DVORYANKINA, GG
    DVORYANKIN, VF
    PETROV, AG
    VARAKSIN, GA
    [J]. INORGANIC MATERIALS, 1984, 20 (05): : 632 - 635
12345