DEEP ELECTRON TRAPPING CENTERS IN SI-DOPED INALAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：36
|
作者：
NAKASHIMA, K
NOJIMA, S
KAWAMURA, Y
ASAHI, H
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1987年 / 103卷 / 02期
关键词：
D O I：
10.1002/pssa.2211030222
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：511 / 516
页数：6
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