METAL-INSULATOR SI STRUCTURES WITH LOW INTERFACE STATE DENSITY FABRICATED BY COMBINED ION-BEAM SPUTTERING AND ATOMIC-HYDROGEN BEAM TREATMENT

被引：2
|
作者：
GARRIGUES, M
BLANCHET, R
SIBRAN, C
VIKTOROVITCH, P
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期
关键词：
D O I：
10.1063/1.332281
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2863 / 2865
页数：3
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