ION-BEAM TECHNIQUES COMBINING INSULATOR DEPOSITION AND HYDROGEN PLASMA-ETCHING FOR III-V-COMPOUND METAL-INSULATOR SEMICONDUCTOR-DEVICE APPLICATIONS

被引：11
|
作者：
SIBRAN, C
BLANCHET, R
GARRIGUES, M
VIKTOROVITCH, P
机构：
来源：
THIN SOLID FILMS | 1983年 / 103卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(83)90437-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：211 / 219
页数：9
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  • [1] PLASMA-ETCHING OF III-V-COMPOUND SEMICONDUCTOR-MATERIALS AND THEIR OXIDES
    SMOLINSKY, G
    CHANG, RP
    MAYER, TM
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (01): : 12 - 16
  • [2] SOME APPLICATIONS OF ION-BEAMS IN III-V COMPOUND SEMICONDUCTOR-DEVICE FABRICATION
    DONNELLY, JP
    ANDERSON, KK
    WOODHOUSE, JD
    GOODHUE, WD
    YAP, D
    GAIDIS, MC
    WANG, CA
    [J]. ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 421 - 432
  • [3] METAL-INSULATOR SI STRUCTURES WITH LOW INTERFACE STATE DENSITY FABRICATED BY COMBINED ION-BEAM SPUTTERING AND ATOMIC-HYDROGEN BEAM TREATMENT
    GARRIGUES, M
    BLANCHET, R
    SIBRAN, C
    VIKTOROVITCH, P
    [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2863 - 2865
  • [4] CHLORINE-BASED SMOOTH REACTIVE ION-BEAM ETCHING OF INDIUM-CONTAINING III-V COMPOUND SEMICONDUCTOR
    YOSHIKAWA, T
    KOHMOTO, S
    ANAN, M
    HAMAO, N
    BABA, M
    TAKADO, N
    SUGIMOTO, Y
    SUGIMOTO, M
    ASAKAWA, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12B): : 4381 - 4386
  • [5] CONSEQUENCES OF ANION VACANCY NEAREST-NEIGHBOR HOPPING IN III-V-COMPOUND SEMICONDUCTORS - DRIFT IN INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    VANVECHTEN, JA
    WAGER, JF
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1956 - 1960
  • [6] Gate quality Si3N4 prepared by low temperature remote plasma enhanced chemical vapor deposition for III-V semiconductor-based metal-insulator-semiconductor devices
    Park, DG
    Tao, M
    Li, D
    Botchkarev, AE
    Fan, Z
    Wang, Z
    Mohammad, SN
    Rockett, A
    Abelson, JR
    Morkoc, H
    Heyd, AR
    Alterovitz, SA
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (04): : 2674 - 2683
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