DEEP LEVELS IN NITROGEN-IMPLANTED N-TYPE GAAS

被引：13
|
作者：
CHEN, KM [1 ]
JIA, YQ [1 ]
CHEN, Y [1 ]
LI, AP [1 ]
JIN, SX [1 ]
LIU, HF [1 ]
机构：
[1] BEIJING INST NONFERROUS MET,BEIJING 100088,PEOPLES R CHINA
来源：
JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 06期
关键词：
D O I：
10.1063/1.359889
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ti/n-GaAs Schottky barrier diodes were prepared on nitrogen-implanted n GaAs. The Schottky barrier height of the diodes was found to be 0.96 eV, 0.12 eV higher than that of the samples without N implantation. Four distinctive electron traps E1(0.111), E2(0.234), E3(0.415), and E4(0.669) and one hole trap, H(0.545), have been observed with deep level transient spectroscopy. Defect models of these deep levels are proposed and the role of H(0.545) in the Schottky barrier formation is also discussed. (C) 1995 American Institute of Physics.
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页码：4261 / 4263
页数：3
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