共 50 条
- [41] Three-dimensional effects for two-dimensional samples in plasma immersion ion implantation Mändl, S. (stephan.maendl@iom-leipzig.de), 1600, American Institute of Physics Inc. (96):
- [45] STABILITY OF POST-GROWTH ANNEALED SUBSTRATES DURING ION-IMPLANTATION ANNEALING SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 99 - 104
- [46] Ultrashallow and low-leakage p+n junction formation by plasma immersion ion implantation (PIII) and low-temperature post-implantation annealing Kanemoto, K., 2001, Japan Society of Applied Physics (40):
- [47] Ultrashallow and low-leakage p+n junction formation by plasma immersion ion implantation (PIII) and low-temperature post-implantation annealing JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (4B): : 2706 - 2711
- [50] Current analysis of ion implanted p+/n 4H-SiC junctions:: post-implantation annealing in Ar ambient Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 815 - 818