VAPOR-PHASE EPITAXIAL-GROWTH OF HIGHLY CONDUCTIVE P-TYPE ZNSE FILMS WITH CODOPING OF P AND LI

被引：8
|
作者：
MURANOI, T
FUJITA, Y
WATANABE, T
ISHII, N
MOTO, Y
FURUKOSHI, M
机构：
[1] Department of Electronics, Ibaraki University, Hitachi
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 11期
关键词：
Analysis; Codoping of P and Li; Degenerate; EPMA; Hall effect; P-type ZnSe films; Photoluminescence; SiMS; VPE;
D O I：
10.1143/JJAP.29.L1959
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Highly conductive p-type ZnSe films were grown at 450-500°C onto (100)GaAs by vapor phase epitaxy with codoping of P and Li. Vapors of Zn, Se and impurities were transported separately to the vicinity of the infstrates. Hall effect measurement revealed that p-type films were degenerate. When either only P or Li was doped, the resistivity was very high and its conductivity type was unknown. The SiMS analysis showed a uniform profile of both impurities in the p-type epitaxial film: the Li concentration was estimated as 1019cm-3; P was an order of 1018cm-3with the aid of EPMA. © 1990 IOP Publishing Ltd.
引用
收藏
页码：L1959 / L1962
页数：4
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