MONTE-CARLO SIMULATION OF COVALENT SURFACES

被引：14
|
作者：
VANDEREERDEN, JP
LIU, GZ
DEJONG, F
ANDERS, MJ
机构：
[1] RIM, Laboratory of Solid State Chemistry, University of Nijmegen, 6525ED Nijmegen, Toernooiveld
来源：
JOURNAL OF CRYSTAL GROWTH | 1990年 / 99卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(90)90493-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
In this report we discuss some results we have obtained with the Monte Carlo simulation of Si surfaces, using the now classical Stilinger-Weber model for the interaction potential. Next we discuss how this model can be generalized in order to describe a lot of other related systems. In particular we have in mind the Si surface under chemical vapour deposition conditions and the diamond surface under the high temperature and high pressure conditions under which it is grown from a metal alloy flux. © 1990.
引用
收藏
页码：106 / 111
页数：6
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