TEM ANALYSIS OF INGAAS/INALAS EPITAXIAL LAYERS GROWN OVER INP PATTERNED SUBSTRATES

被引：0
|
作者：
PEIRO, F
CORNET, A
MORANTE, JR
ZEKENTES, K
GEORGAKILAS, A
机构：
[1] UNIV BARCELONA,SERV CIENT TECN,E-08028 BARCELONA,SPAIN
[2] FDN RES & TECHNOL HELLAS,CRETE,GREECE
来源：
MATERIALS LETTERS | 1994年 / 21卷 / 5-6期
关键词：
D O I：
10.1016/0167-577X(94)90243-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structural characteristics of InAlAs/InGaAs films grown in plasma etched wells by molecular beam epitaxy have been analyzed by transmission electron microscopy. While the density of defects in the layer grown inside the well is comparable to the one obtained in layers grown in non-patterned substrates, a high density of defects, originated by the faceting properties of the growth, is observed near the window's edge.
引用
收藏
页码：371 / 375
页数：5
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