TRANSPORT-PROPERTIES OF VACUUM-DEPOSITED TIN TELLURIUM ALLOY-FILMS

被引：6
|
作者：
ATHWAL, IS
THAMAN, M
BEDI, RK
机构：
[1] Guru Nanak Dev Univ, Amritsar, India, Guru Nanak Dev Univ, Amritsar, India
来源：
JOURNAL OF MATERIALS SCIENCE | 1986年 / 21卷 / 09期
关键词：
FILMS; -; Metallic; METALLOGRAPHY; Order-Disorder;
D O I：
10.1007/BF00553363
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The transport properties of Sn//1// minus //xTe//x (0 less than x less than 1) alloy films (200 nm) deposited on a glass substrate at room temperature have been studied. It has been observed that films with composition around x equals 0. 6 show minimum resistivity, maximum carrier mobility and more order in their structure. The ordered films are found to have a higher value of temperature coefficient of resistivity than the disordered ones.
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页码：3243 / 3247
页数：5
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