ANNEALING AND THICKNESS EFFECTS ON ELECTRICAL-RESISTANCE OF VACUUM-DEPOSITED TIN ANTIMONIDE ALLOY-FILMS

被引：8

作者：

DAMODARADAS, V ^{[1
]}

JAGADEESH, MS ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,DEPT PHYS,THIN FILM LAB,MADRAS 600 036,INDIA

来源：

THIN SOLID FILMS | 1974年 / 24卷 / 02期

关键词：

D O I：

10.1016/0040-6090(74)90165-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：203 / 210

页数：8

共 50 条

[1] EFFECTS OF ANNEALING ON THE ELECTRICAL-RESISTANCE OF VACUUM-DEPOSITED TELLURIUM-FILMS
SAHA, SK
INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1981, 19 (02) : 111 - 114
[2] TRANSPORT-PROPERTIES OF VACUUM-DEPOSITED TIN TELLURIUM ALLOY-FILMS
ATHWAL, IS
THAMAN, M
BEDI, RK
JOURNAL OF MATERIALS SCIENCE, 1986, 21 (09) : 3243 - 3247
[3] ELECTRICAL-CONDUCTIVITY, DEFECT DENSITY AND STRUCTURE OF OBLIQUELY VACUUM-DEPOSITED TIN ANTIMONIDE ALLOY THIN-FILMS
DAS, VD
JAGADEESH, MS
JOURNAL OF MATERIALS SCIENCE, 1982, 17 (03) : 671 - 676
[4] EFFECT OF ANNEALING AND THICKNESS ON THE ELECTRICAL-RESISTIVITY OF VACUUM-DEPOSITED THIN PALLADIUM FILMS
SINGH, KB
HATIBARUA, J
INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1982, 20 (03) : 183 - 186
[5] METASTABLE STATES IN VACUUM-DEPOSITED CU-W ALLOY-FILMS
DOTSENKO, FF
MIROSHNICHENKO, IS
BASHEV, VF
INORGANIC MATERIALS, 1991, 27 (04) : 728 - 729
[6] AMORPHOUS NATURE OF VACUUM-DEPOSITED BI-SB ALLOY-FILMS
INOUE, M
URAI, N
YAGI, H
SURFACE SCIENCE, 1979, 86 (JUL) : 369 - 377
[7] TRANSPORT-PROPERTIES OF VACUUM-DEPOSITED INDIUM-ANTIMONY ALLOY-FILMS
KAUR, S
BEDI, RK
MATERIALS RESEARCH BULLETIN, 1990, 25 (11) : 1421 - 1428
[8] THICKNESS DEPENDENCE OF ELECTRICAL-RESISTIVITY OF VACUUM-DEPOSITED SELENIUM FILMS
SHARMA, AK
SINGH, B
INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1983, 21 (07) : 420 - 421
[9] STRUCTURE FORMATION AND PROPERTIES OF VACUUM-DEPOSITED MULTICOMPONENT (CU-MN-NI) ALLOY-FILMS
VIGDOROVICH, VN
POPOV, VI
RUSSIAN METALLURGY, 1977, (05): : 83 - 88
[10] ELECTRICAL PROPERTIES OF VACUUM-DEPOSITED GAAS FILMS
NAGASHIM.Y
MORIIZUM.T
TAKAHASH.K
ELECTRICAL ENGINEERING IN JAPAN, 1973, 92 (01) : 25 - 31

← 1 2 3 4 5 →