SELF-ALIGNED SUB-MICRON GATE DIGITAL GAAS INTEGRATED-CIRCUITS

被引：17

|

作者：

LEVY, HM

LEE, RE

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 04期

关键词：

D O I：

10.1109/EDL.1983.25664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：102 / 104

页数：3

相关论文

共 50 条

[41] GAAS MICROWAVE INTEGRATED-CIRCUITS
MYERS, F
ELECTRONICS & WIRELESS WORLD, 1989, 95 (1644): : 984 - 987
[42] NEW RAPID THERMAL ANNEALING FOR GAAS DIGITAL INTEGRATED-CIRCUITS
TAMURA, A
UENOYAMA, T
NISHII, K
INOUE, K
ONUMA, T
JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 1102 - 1107
[43] MAKING GAAS INTEGRATED-CIRCUITS
KIRKPATRICK, CG
PROCEEDINGS OF THE IEEE, 1988, 76 (07) : 792 - 815
[44] THE EFFECT OF BACKGATING ON THE DESIGN AND PERFORMANCE OF GAAS DIGITAL INTEGRATED-CIRCUITS
BIRRITTELLA, MS
SEELBACH, WC
GORONKIN, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (07) : 1135 - 1142
[45] THRESHOLD VOLTAGE ADJUSTABLE PROCESS FOR SELF-ALIGNED GATE GAAS JFET
TIKU, SK
ELECTRONICS LETTERS, 1985, 21 (23) : 1091 - 1093
[46] GAAS-MESFETS WITH A LAB6 SELF-ALIGNED GATE
TAKATANI, S
UCHIDA, Y
YOKOTSUKA, T
NAKASHIMA, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2375 - 2376
[47] APPLICATION OF TUNGSTEN SILICIDE SELF-ALIGNED GATE TO GAAS-FETS
KAO, JC
WU, OKT
SWANSON, A
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : C221 - C221
[48] REFRACTORY SELF-ALIGNED GATE TECHNOLOGY FOR GAAS MICROWAVE FETS AND MMICS
GEISSBERGER, AE
SADLER, RA
GRIFFIN, EL
BAHL, IJ
BALZAN, ML
ELECTRONICS LETTERS, 1987, 23 (20) : 1073 - 1075
[49] SELF-ALIGNED GAAS MISFETS WITH A LOW-TEMPERATURE-GROWN GAAS GATE INSULATOR
CHEN, CL
MAHONEY, LJ
NICHOLS, KB
MANFRA, MJ
GRAMSTORFF, BF
MOLVAR, KM
MURPHY, RA
BROWN, ER
IEEE ELECTRON DEVICE LETTERS, 1995, 16 (05) : 199 - 201
[50] SUB-MICRON VLSI MEMORY-CIRCUITS
MANO, T
YAMADA, J
INOUE, J
NAKAJIMA, S
ISSCC DIGEST OF TECHNICAL PAPERS, 1983, 26 : 234 - &

← 1 2 3 4 5 →