CATASTROPHIC OPTICAL-DAMAGE OF ALGAINP VISIBLE LASER-DIODES UNDER HIGH-POWER OPERATION

被引：1

作者：

FUKUSHIMA, T

FURUYA, A

KITO, Y

SUDO, H

SUGANO, M

TANAHASHI, T

机构：

[1] Fujitsu Laboratories, Ltd., Atsugi

[2] Okayama Prefectural University, Soja, 719-11, Kuboki

来源：

ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS | 1995年 / 78卷 / 07期

关键词：

SEMICONDUCTOR LASER DIODE; GRADUAL DEGRADATION; SUDDEN FAILURE; CATASTROPHIC OPTICAL DAMAGE; LIFETIME EVALUATION; MUTUAL DIFFUSION; NATIVE OXIDE;

D O I：

10.1002/ecjb.4420780702

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The conventional method to evaluate the lifetime of a laser diode for catastrophic optical damage (GOD) has some problems. A new method is proposed that can account for these problems, and the lifetime of AlGaInP visible laser diodes is evaluated using the proposed method. A microauger electron spectroscopy (mu-AES) is used to analyze quantitatively both the mutual diffusion and the native oxide between the coating film and laser crystal. These effects are clarified on the degradation of COD power level.

引用

页码：11 / 19

页数：9

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