HIGHLY TESTABLE DESIGN OF BICMOS LOGIC-CIRCUITS

被引:3
|
作者
OSMAN, MY
ELMASRY, MI
机构
[1] UNIV WATERLOO,DEPT ELECT & COMP ENGN,VLSI RES GRP,WATERLOO N2L 3G1,ONTARIO,CANADA
[2] UNIV WATERLOO,DEPT COMP SCI,WATERLOO N2L 3G1,ONTARIO,CANADA
关键词
TESTING OF BICMOS LOGIC CIRCUITS; DESIGN FOR TESTABILITY; BUILT-IN CURRENT SENSING;
D O I
10.1109/4.293112
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Most of the work reported in the literature to date on the testability of BiCMOS circuits has concentrated on fault characterization and the need for a suitable testing method that can address the peculiarities of BiCMOS circuits. The problem of adequately testing large BiCMOS logic networks remains open and complex. In this paper, we introduce a new design for testability technique for BiCMOS logic gates that results in highly testable BiCMOS logic circuits. The proposed design incorporates two features: a test charge/discharge path and built-in current sensing (BICS). The test charge/discharge path is activated only during testing and facilitates the testing of stuck-open faults using single test vectors. BICS facilitates testing of faults that cause excessive IDDQ. HSPICE simulation results show that the proposed design can detect stuck-open faults at a test speed of 10 MHz. Faults causing excessive IDDQ are detected by BICS with a detection time of 1 ns and a settling time of 2 ns. Impact of the proposed design on normal operation is minimal. The increase in propagation delay in normal operation is less than 3%. This compares very favorably with CMOS BICS reported in the literature [22], [23] where the propagation delay increase was 20%, 14.4% respectively. The increase in the area is less than 15%.
引用
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页码:671 / 678
页数:8
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